14/8/08 db91077 'x' specification approvals z z z z z vde 0884 in 3 available lead forms : - - std - g form - smd approved to cecc 00802 description the h11d series of optically coupled isolators consist of infrared light emitting diode and npn silicon photo transistor in a standard 6 pin dual in line plastic package. features z options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. z high isolation voltage (5.3kv rms ,7.5kv pk ) z high bv cer ( 300v - h11d1, h11d2 ) ( 200v - h11d3, h11d4 ) z all electrical parameters 100% tested z custom electrical selections available applications z dc motor controllers z industrial systems controllers z measuring instruments z signal transmission between systems of different potentials and impedances h11d1x, h11d2x, H11D3X, h11d4x h11d1, h11d2, h11d3, h11d4 high voltage optically coupled isolator phototransistor output absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse voltage 6v power dissipation 100mw output transistor collector-emitter voltage bv cer (r be = 1m ) h11d1, h11d2 300v h11d3, h11d4 200v collector-base voltage bv cbo h11d1, h11d2 300v h11d3, h11d4 200v emitter-collector voltage bv eco 6v collector current 100ma power dissipation 150mw power dissipation total power dissipation 250mw (derate linearly 2.67mw/ c above 25c) 0.26 0.5 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4.0 3.0 2.54 7.62 6.62 0.5 1 34 6 25 option g 7.62 surface mount option sm 10.16 0.26 isocom components 2004 ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, ts25 1ud england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 10.46 9.86 0.6 0.1 1.25 0.75 dimensions in mm
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse current (i r )10 av r = 6v output collector-emitter breakdown (bv cer ) h11d1, h11d2 300 v i c = 1ma, r be = 1m h11d3, h11d4 200 v ( note 2 ) collector-base breakdown (bv cbo ) h11d1, h11d2 300 v i c = 100 a h11d3, h11d4 200 v emitter-collector breakdown (bv eco ) 6 v i e = 100 a collector-emitter dark current (i cer ) h11d1, h11d2 100 na v ce = 200v,r be =1m 250 av ce = 200v,r be =1m , t a =100c h11d3, h11d4 100 na v ce = 100v,r be =1m 250 av ce = 100v,r be =1m , t a =100c coupled current transfer ratio (ctr) 20 % 10ma i f , 10v v ce , r be = 1m collector-emitter saturation voltagev ce(sat) 0.4 v 10ma i f , 0.5ma i c , r be = 1m input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 v io = 500v (note 1) turn-on time ton 5 sv cc = 10v, i c = 2ma, turn-off time toff 5 s r l = 100 , fig 1 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 14/8/08 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l = 100 input 10% 90% 90% 10% t on t r fig 1 v cc t off t f db91077m-aas/a3
14/8/08 100 ambient temperature t a ( c ) 300 0 400 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 200 forward current i f (ma) 70 80 -30 0 25 50 75 100 125 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 relative current transfer ratio relative current transfer ratio vs. ambient temperature 1 2 5 10 20 50 1.0 10 relative current transfer ratio forward current i f (ma) 0.1 0.01 0.8 1.0 -30 0 25 50 75 100 ambient temperature t a ( c ) 0 100 200 300 400 500 600 700 0.1 0.2 0.5 1 2 5 10 20 50 0.9 1.1 1.3 1.2 1.4 forward current i f (ma) forward voltage v f (v) v ce = 10v r be = 1m t a = 25c relative current transfer ratio vs. forward current ( normalised to 10ma i f ) 1.6 1.8 2.0 2.2 2.4 -30 0 25 50 75 100 ambient temperature t a ( c ) 800 normalised to v ce = 10v , i f = 10ma , r be = 1m , t a = 25c i f = 20ma i f = 10ma i f = 5ma collector-base current i cbo ( a) collector-base current vs. ambient temperature forward voltage vs. forward current v cb = 10v i f = 50ma v cb = 200v i f = 10ma v cb = 10v i f = 5ma v cb = 10v i f = 10ma t a = -55c t a = +25c t a = +100c db91077m-aas/a3
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